摘 要：基于GaAs增强型pHEMT工艺，设计了一款单电源供电、工作频率覆盖0.1 GHz～18 GHz单片集成宽带低噪声放大器芯片。在同一芯片上集成分布式低噪声放大器和有源偏置电路，通过有源偏置电路为分布式放大器提供栅压实现放大器单电源供电。在片测试结果表明，放大器在 +5 V 工作电压下，工作电流 60 mA，在 0.1 GHz ～ 18 GHz 工作频段范围内实现小信号增益 18 dB，输出P1 dB（1 dB 压缩点输出功率）典型值 12 dBm，噪声系数典型值 2.5 dB。放大器的芯片尺寸为 2.4 mm×1.0 mm×0.07 mm。
关键词：增强型 pHEMT；单电源；宽带；分布式放大器；有源偏置
DOI:10.19850/j.cnki.2096-4706.2022.08.013
中图分类号：TN722 文献标识码：A 文章编号：2096-4706（2022）08-0045-04
0.1 GHz ～ 18 GHz Single Supply Broadband Low Noise Amplifier
YANG Nan, YANG Qi, LIU Peng
(the 13th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050051, China)
Abstract: Based on GaAs enhanced pHEMT process, a monolithic integrated broadband low noise amplifier chip with single power supply and working frequency covering 0.1 GHz ～ 18 GHz is designed. The distributed low noise amplifier and active bias circuit are integrated on the same chip. It provides the gate voltage for the distributed amplifier to realize the single power supply of the amplifier through active bias circuits. The on-chip test results show that under the working voltage of + 5 V, the working current of the amplifier is 60 mA, the small signal gain is 18 db in the working frequency band of 0.1 GHz ～ 18 GHz, the typical value of output P1 db (1dB compression point output power) is 12 dbm, and the typical value of noise coefficient is 2.5 dB. The chip size of the amplifier is 2.4 mm×1 0 mm×0. 07 mm.
Keywords: enhanced pHEMT; single supply; broadband; distributed amplifier; active bias
参考文献：
[1] NIKANDISH G，MEDI A. A 40 GHz bandwidth tapered distributed LNA [J].IEEE Transactions on Circuits and Systems II：Express Breifs，2018，65（11），1614-1618.
[2] BANYAMIN B Y，VIRDEE B S，VIRDEE A S. Broadband Microwave Amplifier [M].[S.I.]：Artech House，2004，119-175.
[3] HU J，MA K，MOU S，et al. Analysis and design of a 0.1-23GHz LNA MMIC using frequency-dependent feedback [J].IEEE Transactions on Circuits and Systems II：Express Briefs，2019，66（9）：1517-1521.
[4] 吴健，郑远，艾宣，等 .0.5 dB 噪声系数高线性有源偏置低噪声放大器设计 [J]. 固体电子学研究与进展，2014，34（3）：211-215.
[5] 张博，肖宝玉 . 超短波低噪声放大器的设计 [J]. 电子元件与材料，2021，40（5）：474-478.
作者简介：杨楠（1990—），女，汉族，山东菏泽人，工程师，硕士学位，研究方向：集成电路设计。