Article Details

Abstract

To solve the problems of large leakage current, large temperature drift, poor consistency of diaphragm thickness, and complex packaging process of traditional pressure sensors, and to improve the stability, sensitivity, and process reliability of sensors, this study takes the high-stability flip-chip polysilicon pressure sensor as the research object and carries out its design and application research. The sensor body is constructed using the SOI-based polysilicon sensing structure, and the polysilicon growth and doping processes are optimized in combination with mechanical simulation technology to achieve precise structural optimization; the SOI substrate is used to improve the consistency of the wafer diaphragm thickness, and the flip-chip TSV structure is adopted to simplify the packaging process. The test results show that the designed sensor exhibits the excellent characteristics of low leakage current and low temperature drift. After the collaborative optimization of structure and process, the sensitivity is significantly improved and the stability is excellent; the SOI substrate effectively ensures the uniformity of the wafer diaphragm thickness, and the flip-chip TSV structure can be directly packaged using SMT soldering, which replaces the traditional wire bonding process, greatly simplifies the production process, and improves the process reliability. In summary, the high-stability flip-chip polysilicon pressure sensor designed in this study has excellent comprehensive performance and convenient packaging, which can meet the application requirements for high-precision and high-stability pressure detection in related fields and provides a reference for the design and optimization of similar sensors.

Keywords

pressure sensors; TSV; polysilicon; SOI

References

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About the authors

Li Shucheng (August 1984-), male, Han ethnicity, from Jiangmen, Guangdong, senior engineer, master's student, research interests include MEMS sensor development and applications; Fang Zechuan (August 1983-), male, Han ethnicity, from Jiangmen, Guangdong, senior engineer, bachelor's degree, research interests include sensor development and applications; Ruan Bingquan (September 1980-), male, Han ethnicity, from Jiangmen, Guangdong, senior engineer, master's student, research interests include sensor development and applications.