Article Details

Abstract

This study presents an ultra-wideband limiter low-noise amplifier chip based on a GaAs 0.25 μm PHEMT process. The chip covers the L and S bands to achieve wideband amplification, and the PIN limiter prevents microwave impedance modulation caused by high-power microwave pulse signals, thereby improving the power handling capability of the circuit and its ability to handle complex input signals. The amplifier adopts a two-stage cascaded cascode structure, and its input matching employs a PIN limiter to realize the limiting function. The noise matching structure is optimized through source inductive degeneration, and the shunt resistive feedback combined with series and shunt inductive peaking extends the bandwidth while improving linearity. The chip area is 1.56 mm². Measurements show that the amplifier achieves an operating frequency range of 1.5 to 4.5 GHz, with a noise figure (NF) below 0.75 dB, a limiting level below 27 dBm, a gain (S21) above 37 dB, and an output 1 dB compression point (OP1dB) above 19.5 dBm.

Keywords

GaAs; ultra-wideband; limiter low-noise amplifier; S-band

References

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About the authors

Lu Yuxi (1994-), female, Han ethnicity, from Chongqing, engineer, master's student, research interests include RF and microwave integrated circuit design; Li Shengjun (1992-), male, Han ethnicity, from Langzhong, Sichuan, engineer, master's student, research interests include RF and microwave integrated circuit design; Pang Bo (1993-), male, Han ethnicity, from Qinhuangdao, Hebei, engineer, master's degree, research interests include RF and microwave integrated circuit design; Liu Yanning (1989-), male, Han ethnicity, from Yangquan, Shanxi, engineer, doctoral student, research interests include RF and microwave integrated circuit design; Yang Demeng (1992-), male, Han ethnicity, from Bole, Xinjiang, engineer, master's student, research interests include RF and microwave integrated circuit design; Gu Xun (1992-), male, Han ethnicity, from Chengdu, Sichuan, engineer, master's student, research interests include RF and microwave integrated circuit design.